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DMP2012SN
1.6
1.4
0.5
0.4
V GS = -2.5V
1.2
V GS = -2.5V
I D = -400mA
0.3
V GS = -2.5V
I D = -400 A
I D = -700 A
V GS = -4.5V
1.0
I D = -700mA
0.8
V GS = -2.5V
0.2
V GS = -4. 5V
I D = -700m A
0.6
I D = -700mA
0.1
0.4
-50
-25 0 25 50 75 100 125 150
T J , JUNCTION TEMPERATURE ( ? C)
0
-50
-25 0 25 50 75 100 125 150
T J , JUNCTION TEMPERATURE ( ? C)
1.5
Figure 7 On-Resistance Variation with Temperature
Figure 8 On-Resistance Variation with Temperature
1,000
f = 1MHz
1.0
-I D = 1mA
C iss
-I D = 250μA
0.5
C oss
C rss
0
-50
-25 0 25 50 75 100 125 150
100
0
2
4 6 8 10 12 14 16 18 20
T A , AMBIENT TEMPERATURE (°C)
Figure 9 Gate Threshold Variation vs. Ambient Temperature
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
Dim
A
B
-V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
SC59
Min Max Typ
0.35 0.50 0.38
1.50 1.70 1.60
G
H
B C
C
D
G
H
J
K
2.70 3.00 2.80
- - 0.95
- - 1.90
2.90 3.10 3.00
0.013 0.10 0.05
1.00 1.30 1.10
K
N
M
L
M
0.35 0.55 0.40
0.10 0.20 0.15
N
0.70 0.80 0.75
J
DMP2012SN
Document number: DS30790 Rev. 7 - 2
D
L
4 of 5
www.diodes.com
?? 0° 8° -
All Dimensions in mm
September 2013
? Diodes Incorporated
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